1950°C Annealing of Al+ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

Roberta Nipoti; Antonella Parisini; Salvatore Vantaggio; Giovanni Alfieri; Alberto Carnera; Emanuele Centurioni; Ivan Elmi; Ulrike Grossner

doi:10.4028/www.scientific.net/MSF.858.523

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HomeMaterials Science ForumMaterials Science Forum Vol. 8581950°C Annealing of Al+ Implanted 4H-SiC: Sheet...

1950°C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

Abstract:

This study shows that, after annealing at 1950°C, a 1×10²⁰ cm^-3 Al⁺ implanted 4H-SiC material shows a decreasing resistivity with increasing annealing time in the range 5-25 min. After this, the resistivity remains constant up to an annealing time of 40 min. The estimated minimum time to gain the thermal equilibrium in this implanted material at 1950°C is 12 min. Electrical characterization has been performed in the 20-680 K temperature range.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

523-526

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.523

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Online since:

May 2016

Authors:

Roberta Nipoti*, Antonella Parisini, Salvatore Vantaggio, Giovanni Alfieri, Alberto Carnera, Emanuele Centurioni, Ivan Elmi, Ulrike Grossner

Keywords:

4H-SiC, Electrical Doping by Ion Implantation, Post Implantation Annealing

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References

[1] Y. Negoro, T. Kimoto, H. Matsunami, F. Schmid, and G. Pensl, Electrical activation of high-concentration aluminum implanted in 4H-SiC, J. Appl. Phys. 96 (2004) 4916-4922.

DOI: 10.1063/1.1796518

Google Scholar

[2] R. Nipoti, A. Nath., Mulpuri V. Rao, A. Hallén, A. Carnera, and Y-Lai Tian, Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC, Appl. Phys. Exp. 4 (2011) 111301.

DOI: 10.1143/apex.4.111301

Google Scholar

[3] R. Nipoti, R. Scaburri, A. Hallen, and A. Parisini, Conventional thermal annealing for a more efficient p-type doping of Al+ implanted 4H-SiC, J. Mater. Res. 28(1) (2013) 17-22.

DOI: 10.1557/jmr.2012.207

Google Scholar

[4] H. Nakamura, H. Watanabe, J. Yamazaki, N. Tanaka, R. K. Malhan, Micro-structural and electrical properties of Al-implanted & lamp annealed 4H-SiC, Mater. Sci. Forum 389-393 (2002) 807-810.

DOI: 10.4028/www.scientific.net/msf.389-393.807

Google Scholar

[5] R. Nipoti, F. Mancarella, F. Moscatelli, R. Rizzoli, S. Zampolli, and M. Ferri, Carbon-Cap for Ohmic Contacts on Ion-Implanted 4H–SiC, Electrochem. Sol. -St. Lett., 13 (12) (2010) H432-H435.

DOI: 10.1149/1.3491337

Google Scholar

[6] R. Nipoti, L. Di Benedetto, C. Albonetti, and S. Bellone, Al+ Implanted Anode for 4H-SiC p-i-n Diodes, ECS Transactions, 50 (3) (2012) 391-397.

DOI: 10.1149/05003.0391ecst

Google Scholar

[7] I. G. Ivanov, A. Henry, and E. Janzen, Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission, Phys. Rev. B 71 (2005) 241201(R).

DOI: 10.1103/physrevb.71.241201

Google Scholar

[8] A. Parisini, M. Gorni, A. Nath, L. Belsito, Mulpuri V. Rao, and R. Nipoti, Remarks on the Room Temperature Impurity Band Conduction in heavily Al+ Implanted 4H-SiC, J. Appl. Phys. 118 (2015) 035101.

DOI: 10.1063/1.4926751

Google Scholar