Paper Titles

Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiС MOS Devices
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Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors
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Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs
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Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors
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Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors
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Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance
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High Temperature Nitridation of 4H-SiC MOSFETs
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Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures
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Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Time Dependent Dielectric Breakdown in High...

Time Dependent Dielectric Breakdown in High Quality SiC MOS Capacitors

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Abstract:

In this paper we report TDDB results on SiO₂/SiC MOS capacitors fabricated in a matured production environment. A key feature is the absence of early failure out of over 600 capacitors tested. The observed field accelerations and activation energies are higher than what is reported on SiO₂/Si of similar oxide thickness. The great improvement in oxide reliability and the deviation from typical SiO₂/SiC observations are explained by the quality of the oxide in this study.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

615-618

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.615

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Online since:

May 2016

Authors:

Zakariae Chbili, Kin P. Cheung*, Jason P. Campbell, Jaafar Chbili, Mhamed Lahbabi, Dimitris E. Ioannou, Kevin Matocha

Keywords:

Activation Energy, Field Acceleration, MOS Capacitor, Power Electronics, Reliability, Silicon Carbide (SiC), TDDB, Weibull Distribution

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