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HomeMaterials Science ForumMaterials Science Forum Vol. 8586.5 kV n-Channel 4H-SiC IGBT with Low Switching...

6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer

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Abstract:

Thin drift layers were used to realize n-channel 4H-SiC IGBTs with an extremely low switching loss. The thickness of a drift layer was 60 μm, which was designed for a blocking voltage of 6.5 kV. An on-voltage of 5.4 V was obtained at a collector current of 100 A/cm² and the specific differential on-resistance at 100 A/cm² was 20 mΩcm² at room temperature, indicating proper bipolar operation. A switching evaluation of the SiC IGBTs was performed with a bus voltage of 3.6 kV and a load current of 10 A, and a turn-off loss of 1.2 mJ was obtained. This turn-off loss is very small compared to the values in the current literatures, and was estimated to be an over 80% reduction. The series operation of thin-drift-layer 6.5 kV SiC IGBTs can ensure a lower switching loss than the single operation of higher blocking voltage devices in power conversion systems.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

939-944

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.939

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Online since:

May 2016

Authors:

Naoki Watanabe*, Hiroyuki Yoshimoto, Akio Shima, Renichi Yamada, Yasuhiro Shimamoto

Keywords:

4H-SiC, IGBT, Low Switching Loss, N-Channel, Ultra-High Voltage

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* - Corresponding Author

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