Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces

Massimo Camarda; Judith Woerle; Véronique Soulière; Gabriel Ferro; Hans Sigg; Ulrike Grossner; Jens Gobrecht

doi:10.4028/www.scientific.net/MSF.897.107

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Growth of Cubic Silicon Carbide on Silicon Using Hot Filament CVD
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A Study on 3C-SiC Carbonization on Misoriented Si Substrates: From Research to Production Scale Reactors
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Susceptor Coating Materials Applicable for SiC Reactor Cleaning
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Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces
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Quantitative Investigation of Near Interface Traps in 4H-SiC MOSFETs via Drain Current Deep Level Transient Spectroscopy
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Analysis of Interface Trap Density and Channel Mobility in 4H-SiC NMOS Capacitors and Lateral MOSFETs
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Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers
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Anomalous Fowler-Nordheim Tunneling through SiO₂/4H-SiC Barrier Investigated by Temperature and Time Dependent Gate Current Measurements
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Analysis of 4H-SiC MOS Capacitors on Macro-Stepped...

Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces

Abstract:

In this study, we compare the electrical properties of MOS capacitors fabricated on different surface morphologies. Comparing a standard, low-roughness (<1nm), surface with one with a roughness of ~40nm, characterized by big macrosteps and large terraces. We compared the two surfaces for different thermal oxide thicknesses, ranging from d_Ox = 3.6 nm to d_Ox = 32 nm. The extracted interface state traps (D_it) shows a small, but systematic, decrease of ~10-15 % for the samples with macrosteps.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

107-110

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.107

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Online since:

May 2017

Authors:

Massimo Camarda*, Judith Woerle, Véronique Soulière, Gabriel Ferro, Hans Sigg, Ulrike Grossner, Jens Gobrecht

Keywords:

Capacitors, Chemical Vapor Deposition (CVD), Faceting, Interface State Traps, Liquid Silicon, Macrostep, Step Bunching

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* - Corresponding Author

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