Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization

R.T. Leonard; M.J. Paisley; S. Bubel; J.J. Sumakeris; A.R. Powell; Y. Khlebnikov; J.C. Seaman; J. Ambati; Albert A. Burk; Michael J. O’Loughlin; E. Balkas

doi:10.4028/www.scientific.net/MSF.897.226

Paper Titles

Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers
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Modeling of Stacking Fault Expansion Velocity of Body Diode in 4H-SiC MOSFET
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Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
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Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence
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Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization
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Creation and Functionalization of Defects in SiC by Proton Beam Writing
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Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
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New Efficient Canal of THz Emission from SiC Natural Superlattices in Conditions of Wannier-Stark Localization
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Point Defects Investigation of High Energy Proton Irradiated SiC p⁺-i-n Diodes
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Exploration of Bulk and Epitaxy Defects in 4H-SiC...

Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization

Abstract:

In this work, aggregate epitaxial carrot distributions are observed at the crystal, wafer and dislocation defect levels, instead of individual extended carrot defect level. From combining large volumes of data, carrots are observed when both threading screw dislocations (TSD) and basal plane dislocations (BPD) densities are locally high as seen in full wafer maps. Dislocation density distributions in areas of carrot formation are shown, and suggest TSD limit the formation of carrots in regions containing BPD. These data also add support for mechanisms requiring the need for both dissociated BPD and TSD for carrot formation.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

226-229

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.226

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Online since:

May 2017

Authors:

R.T. Leonard*, M.J. Paisley, S. Bubel, J.J. Sumakeris, A.R. Powell, Y. Khlebnikov, J.C. Seaman, J. Ambati, Albert A. Burk, Michael J. O’Loughlin, E. Balkas

Keywords:

4H-SiC, Basal Plane Dislocation (BPD), Bulk Defects, Defect Characterization, Epitaxial Defects, Threading Screw Dislocation

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References

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