Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

Roberta Nipoti; Maurizio Puzzanghera; Giovanna Sozzi

doi:10.4028/www.scientific.net/MSF.897.439

Paper Titles

10+ kV Implantation-Free 4H-SiC PiN Diodes
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4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density
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Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
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6.5 kV 4H-SiC PiN Diodes without Bipolar Degradation
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Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes
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An Investigation into the Impact of Surface Passivation Techniques Using Metal-Semiconductor Interfaces
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Degradation of 600-V 4H-SiC Schottky Diodes under Irradiation with 0.9 MeV Electrons
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Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension
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Design Optimization of a High Temperature 1.2 kV 4H-SiC Buried Grid JBS Rectifier
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Al+ Ion Implanted 4H-SiC Vertical p+-i-n Diodes:...

Al⁺ Ion Implanted 4H-SiC Vertical p⁺-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes

Abstract:

The reverse and forward currents of Al⁺ ion implanted 4H-SiC p⁺-i-n diodes have been compared for identically processed devices except for the implanted Al concentration in the emitter, 6×10¹⁹ cm^-3 against 2×10²⁰ cm^-3, and the post implantation annealing treatment, 1600°C/30 min and 1650°C/25 min against 1950°C/5min. The diodes’ ambipolar carrier lifetime, as obtained by open circuit voltage decay measurements, has been compared too. The devices with lower annealing temperature show lower leakage currents and higher ambipolar carrier lifetime; they also show lower current in ohmic conduction.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

439-442

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.439

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Online since:

May 2017

Authors:

Roberta Nipoti*, Maurizio Puzzanghera, Giovanna Sozzi

Keywords:

4H-SiC Post Implantation Annealing Temperature, Ambipolar Carrier Life Time, OCVD

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