Lifetime Control in SiC PiN Diodes Using Radiation Defects
p.463
p.463
The Effect of Incomplete Ionization on SiC Devices during High Speed Switching
p.467
p.467
On the Influence of Active Area Design on the Performance of SiC JBS Diodes
p.471
p.471
Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode
p.477
p.477
0.97 mΩcm2/820 V 4H-SiC Super Junction V-Groove Trench MOSFET
p.483
p.483
1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance
p.489
p.489
3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode
p.493
p.493
1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage
p.497
p.497
Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs
p.501
p.501
0.97 mΩcm2/820 V 4H-SiC Super Junction V-Groove Trench MOSFET
Abstract:
We have fabricated Super Junction (SJ) V-groove trench MOSFETs (VMOSFETs), demonstrated a low specific on-resistance (RonA) of 0.97 mΩcm2 and a blocking voltage (VB) of 820 V. In the first trial, SJ structure in 4H-SiC have proved to be a good combination with MOS interface on (0-33-8) faces which keep high channel mobility in high doping concentration. We designed a protection structure called “upper p-pillar region” and demonstrated that VB lowering appeared according to its width.
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Info:
Periodical:
Materials Science Forum (Volume 897)
Pages:
483-488
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Online since:
May 2017
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