1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

Shinsuke Harada; Yusuke Kobayashi; A. Kinoshita; N. Ohse; Takahito Kojima; M. Iwaya; Hiromu Shiomi; Hidenori Kitai; Shinya Kyogoku; Keiko Ariyoshi; Yasuhiko Onishi; Hiroshi Kimura

doi:10.4028/www.scientific.net/MSF.897.497

Paper Titles

Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode
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0.97 mΩcm²/820 V 4H-SiC Super Junction V-Groove Trench MOSFET
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1200V SiC Trench-MOSFET Optimized for High Reliability and High Performance
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3.3 kV 4H-SiC DMOSFET with Highly Reliable Gate Insulator and Body Diode
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1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage
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Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs
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Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions
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Feasibility of SiC Threshold Voltage Drift Characterization for Reliability Assessment in Production Environments
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Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors
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HomeMaterials Science ForumMaterials Science Forum Vol. 8971200 V SiC IE-UMOSFET with Low On-Resistance and...

1200 V SiC IE-UMOSFET with Low On-Resistance and High Threshold Voltage

Abstract:

A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a low on-resistance is accompanied by an extremely low gate oxide field even with a negative gate voltage. The low R_onA was sustained as V_th increases. The R_onA values at V_G=25 V (E_ox=3.2 MV/cm) and V_G=20V (E_ox=2.5 MV/cm), respectively, for the 3mm x 3mm device were 2.4 and 2.8 mWcm² with a lowest V_th of 2.4 V, and 3.1 and 4.4 mWcm²with a high V_th of 5.9 V.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

497-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.497

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Online since:

May 2017

Authors:

Shinsuke Harada*, Yusuke Kobayashi, A. Kinoshita, N. Ohse, Takahito Kojima, M. Iwaya, Hiromu Shiomi, Hidenori Kitai, Shinya Kyogoku, Keiko Ariyoshi, Yasuhiko Onishi, Hiroshi Kimura

Keywords:

IE-UMOSFET, MOSFET, On-Resistance, Threshold Voltage, Trench, UMOSFET

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* - Corresponding Author

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