About the Electrical Activation of 1×1020 cm-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

Roberta Nipoti; Alberto Carnera; Giovanni Alfieri; Lukas Kranz

doi:10.4028/www.scientific.net/MSF.924.333

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HomeMaterials Science ForumMaterials Science Forum Vol. 924About the Electrical Activation of 1×1020 cm-3 Ion...

About the Electrical Activation of 1×10²⁰ cm^-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

Abstract:

The electrical activation of 1×10²⁰ cm^-3 implanted Al in 4H-SiC has been studied in the temperature range 1500 - 1950 °C by the analysis of the sheet resistance of the Al implanted layers, as measured at room temperature. The minimum annealing time for reaching stationary electrical at fixed annealing temperature has been found. The samples with stationary electrical activation have been used to estimate the thermal activation energy for the electrical activation of the implanted Al.

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Periodical:

Materials Science Forum (Volume 924)

Pages:

333-338

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.924.333

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Online since:

June 2018

Authors:

Roberta Nipoti*, Alberto Carnera, Giovanni Alfieri, Lukas Kranz

Keywords:

4H-SiC, Aluminium, Ion Implantation, Post-Implantation Annealing, p-Type Doping, Resistivity, Secondary Ion Mass Spectrometry (SIMS), Stationary Electrical Activation

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