Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain

Satoshi Asada; Jun Suda; Tsunenobu Kimoto

doi:10.4028/www.scientific.net/MSF.924.629

Paper Titles

Design and Manufacturing of 1200V SiC JBS Diodes with Low On-State Voltage Drop and Reverse Blocking Leakage Current
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Breakdown Field Model for 3C-SiC Power Device Simulations
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Analysis of Forward Surge Performance of SiC Schottky Diodes
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A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure
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Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain
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Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes
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Impact of Cell Layout and Device Structure on On-Voltage Reduction of 6.5-kV n-Channel SiC IGBTs
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High Workfunction, Compound Gate Metal Engineering for Low DIBL, High Gain, High Density Advanced RF Power Static Induction Transistor (SIT) and HV Schottky Diode in 4H Silicon Carbide
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Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region
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Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain

Abstract:

Effects of a parasitic region in SiC BJTs on conductivity modulation and a forced current gain (β_F) were investigated by using TCAD simulation with various device structures. By introducing an Al⁺-implanted region below the base parasitic region, β_Fcan be improved because the implanted region can reduce the base spreading resistance, leading to alleviation of debiasing effect. β_Fin devices with various parasitic areas, whose base spreading resistances were reduced by the Al⁺-implantation, were compared. We found that β_Fcan be enhanced by expanding the parasitic area if the base spreading resistance is sufficiently reduced. The higher β_Fis attributed to an expanded conductivity-modulated region. The collector current spreading in the collector layer and the hole injection from the parasitic region as well as from the intrinsic region can play a role to evoke the conductivity modulation. Thus, the larger parasitic region can expand the conductivity-modulated region, resulting in expansion of an active area and the enhancement of β_F.