Influence of the Etching Process on the Surface Morphology of 4H-SiC Substrate Used in the Epitaxial Graphene

Zhi Fei Zhao; Yun Li; Yi Wang; Ping Zhou; Wu Yun; Zhong Hui Li

doi:10.4028/www.scientific.net/MSF.954.21

Paper Titles

Preface

Effect of Growth Chamber Structure on the Growth of Aluminum Nitride Crystals
p.3

Investigation of the 6-Folded Pattern in the Facetted Region of 4° Off-Axis 4H-SiC
p.9

Effects of Annealing Parameters on Epitaxial Graphene on SiC Substrates
p.14

Influence of the Etching Process on the Surface Morphology of 4H-SiC Substrate Used in the Epitaxial Graphene
p.21

Theoretical Calculation and Simulation for Microcantilevers Based on SiC Epitaxial Layers
p.26

Homoepitaxial Growth on Si-Face (0001) On-Axis 4H-SiC Substrates
p.31

Progress in Single Crystal Growth of Wide Bandgap Semiconductor SiC
p.35

Study on Carbon Particle Inclusions during 4H-SiC Growth by Using Physical Vapor Transport System
p.46

HomeMaterials Science ForumMaterials Science Forum Vol. 954Influence of the Etching Process on the Surface...

Influence of the Etching Process on the Surface Morphology of 4H-SiC Substrate Used in the Epitaxial Graphene

Abstract:

The morphology of the in-situ etching process on Si-face and C-face 4H-SiC, by annealing in a hydrogen environment, is studied by atomic force microscopy (AFM). The uniform step-terrace morphology of both the Si-face and C-face 4H-SiC is achieved with the assistance of carbon/silicon flux. The full width at half maximum (FWHM) of Raman 2D peak for the graphene grown on the uniform step-terrace morphology of the Si-face and C-face is 36.2 and 22 cm^-1, respectively.

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Periodical:

Materials Science Forum (Volume 954)

Pages:

21-25

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.954.21

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Online since:

May 2019

Authors:

Zhi Fei Zhao*, Yun Li, Yi Wang, Ping Zhou, Wu Yun, Zhong Hui Li

Keywords:

C-Face 4H-SiC, In Situ Etching Process, Si-Face 4H-SiC, Uniform Step-Terrace Morphology

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* - Corresponding Author

References

[1] Y. B. Zhang, Y. W. Tan, H. L. Stormer, and P. Kim, Nature 438(2005)201.

Google Scholar

[2] A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K.Geim, Rev. Mod. Phys. 81(2009)109.

Google Scholar

[3] K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G. L. Kellogg, L. Ley, J. L.McChesney, T. Ohta, S. A. Reshanov, J. Ro¨hrl, E. Rotenberg, A. K. Schmid, D. Waldmann, H. B. Weber, and T. Seyller, Nature Mater. 8 (2009)203.

DOI: 10.1038/nmat2382

Google Scholar

[4] J. Hass, F. Varchon, J. E. Millan-Otoya, M. Sprinkle, N. Sharma, W. A. deHeer, C. Berger, P. N. First, L. Magaud, and E. H. Conrad, Phys. Rev.Lett.100(2008) 125504.

Google Scholar

[5] Y. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H. Chiu, A.Grill, and Ph. Avouris, Science 327(2010)662.

DOI: 10.1126/science.1184289

Google Scholar

[6] F.S. Zhang, X.F. Chen, C.C. Y et al. Materials Letters 195 (2017)82.

Google Scholar

[7] C. Bouhafs, V. Darakchieva, I.L. Persson, A. Tiberj, P.O.Å. Persson, M. Paillet, et al., J. Appl. Phys. 8 (2015) 085701.

Google Scholar

[8] G.G. Jernigan, B.L. VanMil, J.L. Tedesco, J.G. Tischler, E.R. Glaser, A. Davidson III,et al., Nano Lett. 7 (2009) 2605–2609.

Google Scholar