Direct Wafer Bonding for Nanostructure Preparations

Hubert Moriceau; F. Rieutord; C. Morales; A.M. Charvet; O. Rayssac; B. Bataillou; F. Fournel; J. Eymery; A. Pascale; P. Gentile; A. Bavard; J. Mézière; Christophe Maleville; B. Aspar

doi:10.4028/www.scientific.net/SSP.121-123.29

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Preparation and Characterization of CeO₂ with Different Particle Sizes and Morphology
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Shape Evolution of ZnO Nanostructures Modified by Trioctylphosphine Oxide
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Direct Wafer Bonding for Nanostructure Preparations
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Laser Induced Surface Nanostructuring on Ultra-Thin Amorphous Si Films
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HomeSolid State PhenomenaSolid State Phenomena Vols. 121-123Direct Wafer Bonding for Nanostructure...

Direct Wafer Bonding for Nanostructure Preparations

Abstract:

Direct Wafer Bonding has been widely developed and is very attractive for a lot of applications. Using original techniques based on direct bonding enable to carry out specific engineered substrates. Various illustrations are given among which twisted Si-Si bonded substrates, where buried dislocation networks play a key role in the subsequent elaboration of nanostructures.

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Periodical:

Solid State Phenomena (Volumes 121-123)

Pages:

29-32

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.121-123.29

Citation:

Cite this paper

Online since:

March 2007

Authors:

Hubert Moriceau, F. Rieutord, C. Morales, A.M. Charvet, O. Rayssac, B. Bataillou, F. Fournel, J. Eymery, A. Pascale, P. Gentile, A. Bavard, J. Mézière, Christophe Maleville, B. Aspar

Keywords:

Bonded Heterostructures, Bonding Interface, Direct Wafer Bonding, Dislocation, Hydrophilic, Hydrophobic, Nanometer-Scale, Periodic Networks, Si-Si Bonded Structures, SOI

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