Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

Aurimas Uleckas; Eugenijus Gaubas; Joan Marc Rafi; Jiahe Chen; De Ren Yang; Hidenori Ohyama; Eddy Simoen; Jan Vanhellemont

doi:10.4028/www.scientific.net/SSP.178-179.347

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Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping
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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Carrier Lifetime Studies in Diode Structures on Si...

Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping

Abstract:

Results are presented of a comparative study of diodes processed on n-type Cz grown Si substrates without and with Ge doping concentration of about 10¹⁹ cm^-3 and 10²⁰ cm^-3. In order to investigate thermal donor formation, isothermal annealing at 450°C for 0.5 – 5 h was carried out. As processed diodes were also irradiated with 2 MeV electrons with fluences in the range between 10¹⁴ and 10¹⁷ e/cm² to investigate the Ge doping influence on irradiation induced defect formation. Diodes after thermal and radiation treatments have been investigated by combining different techniques.

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

347-352

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.347

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Cite this paper

Online since:

August 2011

Authors:

Aurimas Uleckas, Eugenijus Gaubas, Joan Marc Rafi, Jiahe Chen, De Ren Yang, Hidenori Ohyama, Eddy Simoen, Jan Vanhellemont

Keywords:

Carrier Lifetime, Czochralski Silicon, Defect, Germanium Doping

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References

[1] J. Vanhellemont, J. Chen, W. Xu, D. Yang, J. M. Rafí, H. Ohyama, and E. Simoen, J. Cryst. Growth 317, 8 (2011).

Google Scholar

[2] J.M. Rafi, J. Vanhellemont, E. Simoen, J. Chen, M. Zabala, F. Campabadal, Physica B 404, 4723 (2009).

Google Scholar

[3] H. Ohyama, J.M. Rafi, K. Takakura, E. Simoen, J. Chen, J. Vanhellemont, Physica B 404, 4671 (2009).

Google Scholar

[4] E. Gaubas, and J. Vanhellemont, J. Appl. Phys. 80, 6293 (1996).

Google Scholar

[5] E. Gaubas, and J. Vanhellemont, J. Electrochem. Soc. 154, H231 (2007).

Google Scholar

[6] E. Gaubas, T.Čeponis, J.Kusakovskij, A.Uleckas, S.Sakalauskas, and J.Vaitkus, "Evaluation of fluence dependent variations of capacitance and generation current parameters by transient technique", presentation at rd50 workshop, Barcelona, 2010, www.cern.ch/rd50.

Google Scholar