Evolution of Process - Induced Defects in Silicon under Hydrostatic Pressure
p.387
p.387
Evolution of Monoclinic SiAs Precipitates in Heavily As+ Implanted and Isothermally Annealed Silicon
p.393
p.393
Defect Structures in Si Preamorphized Wafers
p.399
p.399
Behavior of Implanted Nitrogen in Si with the Buried Layer of SiO2 Precipitates
p.405
p.405
Interaction of Implanted into Silicon Fluorine with Radiation Defects
p.411
p.411
Electrical Activity of Halogen-Silicon Complexes
p.417
p.417
Radiation Defect-Induced Optical Absorption of GaP
p.423
p.423
Synchrotron Radiation X-Ray Topography of Growth Striations in Magnetic-Field-Applied Czochralski Silicon
p.429
p.429
Applications of In Situ Transmission Electron Microscopy to the Characterization of Process-Induced Defects
p.439
p.439
Interaction of Implanted into Silicon Fluorine with Radiation Defects
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volumes 19-20)
Pages:
411-416
Citation:
Online since:
January 1991
Authors:
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