Intrinsic Point Defects and Grown-in Defects in Silicon
p.1
p.1
Point Defect Assisted Diffusion in Semiconductors
p.23
p.23
Diffusion and Electrical Properties of 3d Transition-Metal Impurities in Silicon
p.51
p.51
Metastable Defects in Compound Semiconductors
p.73
p.73
Electronic Structure and Hyperfine Structure of Deep Donors in Si and in Some Compound Semiconductors
p.93
p.93
Role of Oxygen in Metal Silicide Formation and Properties
p.119
p.119
The Effects of Implanted Arsenic on Ti-Silicide Formation
p.147
p.147
The Interaction of Hydrogen with Deep Level Defects in Silicon
p.173
p.173
Role of Metal Impurity 'Bi' in Amorphous Chalcogenide Semiconductors
p.249
p.249
The Effects of Implanted Arsenic on Ti-Silicide Formation
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volume 71)
Pages:
147-172
Citation:
Online since:
October 1999
Authors:
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