Dislocation Generation in Device Fabrication Process
p.439
p.439
Microstructural and Electrical Properties of NiSi2 Precipitates at Dislocations in Silicon
p.447
p.447
Electrical and Optical Properties of Dislocations Generated under Pure Conditions
p.453
p.453
Effect of Dynamic Aging of Dislocations on the Deformation Behavior of Extrinsic Semiconductors
p.459
p.459
Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon
p.465
p.465
Precise Measurement of Ge Depth Profiles in SiGe HBT's - a Comparison of Different Methods
p.473
p.473
Capacitance-Transient Detection of X-Ray Absorption Fine Structure: A Possible Tool to Analyze the Structure of Deep-Level Centers?
p.483
p.483
Measurement of Nitrogen Concentration in Cz Silicon Crystals
p.489
p.489
Gold Diffusion as a Tool for Defect Characterization in Si
p.495
p.495
Influence of Nitrogen on Dislocation Mobility in Czochralski Silicon
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volumes 95-96)
Pages:
465-472
Citation:
Online since:
September 2003
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