Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs

Y.Y. Gomeniuk; Y.V. Gomeniuk; A. Nazarov; P.K. Hurley; Karim Cherkaoui; Scott Monaghan; Per Erik Hellström; H.D.B. Gottlob; J. Schubert; J.M.J. Lopes

doi:10.4028/www.scientific.net/AMR.276.87

Paper Titles

Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
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Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
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High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
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Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
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Electrical Properties of High-K LaLuO₃ Gate Oxide for SOI MOSFETs
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Effects of High–Energy Neutrons on Advanced SOI MOSFETs
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Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
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On-Chip Tensile Testing of the Mechanical and Electro-Mechanical Properties of Nano-Scale Silicon Free-Standing Beams
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Non-Standard FinFET Devices for Small Volume Sample Sensors
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 276Electrical Properties of High-K LaLuO3 Gate Oxide...

Electrical Properties of High-K LaLuO₃ Gate Oxide for SOI MOSFETs

Abstract:

The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-κ LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO3/Si interface is presented and typical maxima of 1.2×1011 eV–1cm–2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 µm and 50 µm, respectively) are presented. The front channel mobility appeared to be 126 cm2V–1s–1 and 70 cm2V–1s–1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

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Periodical:

Advanced Materials Research (Volume 276)

Pages:

87-93

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.276.87

Citation:

Cite this paper

Online since:

July 2011

Authors:

Y.Y. Gomeniuk, Y.V. Gomeniuk, A. Nazarov, P.K. Hurley, Karim Cherkaoui, Scott Monaghan, Per Erik Hellström, H.D.B. Gottlob, J. Schubert, J.M.J. Lopes

Keywords:

Channel Mobility, High-K Oxide, Interface State Density (D_it), LaLuO₃, Lanthanum Lutetium Oxide, Molecular Beam Deposition (MBD), MOSFET, SOI, Threshold Voltage, Transconductance

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