The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC

Ioana Pintilie; Lars S. Løvlie; K. Irmscher; Günter Wagner; Bengt Gunnar Svensson; Bernd Thomas

doi:10.4028/www.scientific.net/MSF.615-617.369

Paper Titles

Pulsed EPR Studies of the T_v2a Center in 4H-SiC
p.353

Si_CC_SiAntisite Pairs as Dominant Irradiation Induced Defects in p-Type 4H-SiC
p.357

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC
p.361

Deep Levels Generated by Ion-Implantation in n- and p-Type 4H-SiC
p.365

The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC
p.369

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy
p.373

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC
p.377

Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy
p.381

Determination of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy
p.385

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The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC

Abstract:

Nitrogen doped 4H-SiC epitaxial layers grown by hot-wall chemical vapor deposition were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons or 1.6 MeV protons. The influence of silane and propane flows used during the epilayers growth on the behaviour of radiation induced EH6,7 levels is studied. Samples grown under different conditions were investigated: 1 sample grown in steps of different C/Si ratio obtained by changing the propane flow only; 1 sample grown in steps of different C/Si ratio obtained by changing the silane flow only; 2 samples grown with a C/Si ratio of 1.5 but with different flows of propane and silane. These investigations revealed that the low thermal stability of EH6,7 (the defects anneal out at temperatures as low as 750K) is due to the magnitude of silane flow used during the growth irrespective of the C/Si ratio. A possible structure of the EH6,7 defect is discussed.