Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Ioana Pintilie; Francesco Moscatelli; Roberta Nipoti; Antonella Poggi; Sandro Solmi; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.615-617.533

Paper Titles

Transient Currents Induced in 6H-SiC MOS Capacitors by Oxygen Ion Incidence
p.517

Electrical Characterization of MOS Structures with Deposited Oxides Annealed in N₂O or NO
p.521

Impact of a Treatment Combining Nitrogen Plasma Exposure and Forming Gas Annealing on Defect Passivation of SiO₂/SiC Interfaces
p.525

Oxidation Process of SiC by RTP Technique
p.529

Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer
p.533

Effect of High Temperature Oxidation of 4H-SiC on the Near-Interface Traps Measured by TDRC
p.537

AlON/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices
p.541

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO₂ on 4H-SiC
p.545

Impact of Carbon Cap Annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-Face
p.549

HomeMaterials Science ForumMaterials Science Forum Vols. 615-617Analysis of the Electron Traps at the 4H-SiC/SiO2...

Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

Abstract:

This work is focusing on the effect of a high concentration of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface in MOS capacitors. The N implanted sample (Ninterface ~1x1019cm-3) is compared with a non-implanted one (Ninterface ~1x1016cm-3) by means of the electron interface trap density (Dit). The Dit is determined via High-Low frequency C-V method and Thermal Dielectric Relaxation Current (TDRC) technique. It is shown that the TDRC method, mainly used so far for determination of near interface oxide charges, can be exploited to gain information about the Dit too. The determined value of Dit in the N-implanted sample is nearly one order of magnitude lower than that in the sample without N implantation. Good agreement between the TDRC results and those obtained from High-Low frequency C-V measurements is obtained. Furthermore, the TDRC method shows a high accuracy and resolution of Dit evaluation in the region close to the majority carrier band edge and gives information about the traps located into the oxide.