The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO2 Interface

Ioana Pintilie; Francesco Moscatelli; Roberta Nipoti; Antonella Poggi; Sandro Solmi; Lars S. Løvlie; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.679-680.326

Paper Titles

Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing
p.306

Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers
p.310

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
p.314

Understanding the Inversion-Layer Properties of the 4H-SiC/SiO₂ Interface
p.318

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface
p.326

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
p.338

Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates
p.342

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680The Influence of Excess Nitrogen, on the...

The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO₂ Interface

Abstract:

The effect of nitrogen (N) introduced by ion implantation at the SiO2/4H-SiC interface on the capacitance of the MOS capacitors is investigated. The Thermal Dielectric Relaxation Current (TDRC) technique and Capacitance-Voltage (C-V) measurements performed at different temperatures and probe frequencies on an N implanted sample and on a virgin sample were employed for this purpose. There are three types of defects located at or near the interface, Dit, NIToxfast and NIToxslow that can be distinguished. Only Dit and NIToxfast respond to the a.c. small, high frequency signal at temperatures above 150K. The separation of Dit from the NIToxfast states have enabled us to study the influence of the excess of interfacial Nitrogen on each of the mentioned defects. It has been found that the N-implantation process fully suppresses the formation of NIToxfast and partially NIToxslow and Dit. Theoretical C-V characteristics were computed, based on the defect distributions determined by TDRC, and compared with the experimental ones showing a close agreement.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2010

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

326-329

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.326

Citation:

Cite this paper

Online since:

March 2011

Authors:

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S. Løvlie, Bengt Gunnar Svensson

Keywords:

C-V, Interface State, N Implantation, n-MOS Capacitors, TDRC

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] S. Dhar, S. R. Wang, J. R. Williams, S. T. Pantelides, L. C. Feldman.: MRS Bulletin Vol. 30, (2005) p.288.

Google Scholar

[2] G. V. Soares, I. J. R. Baumvol, L. Hold, F. Kong, J. Han, S. Dimitrijev, S., C. Radtke, CF. C. Stedile: Appl. Phys. Lett. Vol. 91 (2007) p.041906.

DOI: 10.1063/1.2763966

Google Scholar

[3] F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti: IEEE Transactions on Electron Devices Vol. 55 (2008) p.961.

DOI: 10.1109/ted.2008.917107

Google Scholar

[4] A. Poggi F. Moscatelli, Y. Hijikata, S. Solmi, R. Nipoti: Microelectr. Eng. Vol. 84 (2007) p.2804.

Google Scholar

[5] H. Ö. Olafsson, E. O. Sveinbjornsson, T. E. Rudenko, V. I. Kilchytska, I. P. Tyagulski, I. N. Osiyuk : Mater. Sci. Forum 389–393, (2002), p.1001.

DOI: 10.4028/www.scientific.net/msf.389-393.1001

Google Scholar

[6] T. E. Rudenko, I. N. Osiyuk, I. P. Tyagulski, H. O. Olafsson, E. O. Sveinbjornsson: Solid-State Electronics Vol. 49 (2005) p.545.

Google Scholar

[7] I. Pintilie, C. M. Teodorescu, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, L. S. Løvlie and B. G. Svensson:., J. Appl. Phys. Vol. 108, (2010) 024503.

DOI: 10.1063/1.3457906

Google Scholar

[8] J. S. Uranwala, J. G. Simmons and H. A. Mar, Appl. Phys. Lett. 26, (1975), p.697.

Google Scholar

[9] H. A. Mar and J. G. Simmons, Solid-State Electronics 17, (1974), p.131.

Google Scholar

[10] P. Deák, J.M. Knaup, T. Hornos, C. Thill, A. Gali and T. Frauenheim, J. Phys. D: Appl. Phys., 40, (2007), p.6242.

DOI: 10.1088/0022-3727/40/20/s09

Google Scholar