Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO2 Capacitors at Low Temperature Caused by near Interface States

Ioana Pintilie; Francesco Moscatelli; Roberta Nipoti; Antonella Poggi; Sandro Solmi; Lars S. Løvlie; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.679-680.346

Paper Titles

Microscopic Examination of SiO₂/4H-SiC Interfaces
p.330

Reduction in the Density of Interface States at the SiO₂/4H-SiC Interface after Dry Oxidation in the Presence of Potassium
p.334

Shallow Traps at P-Doped SiO₂/4H-SiC(0001) Interface
p.338

Investigation of Surface and Interface Morphology of Thermally Grown SiO₂ Dielectrics on 4H-SiC(0001) Substrates
p.342

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States
p.346

Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance
p.350

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability
p.354

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide
p.358

Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-Rays
p.362

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Non-Nitridated Oxides: Abnormal Behaviour of...

Non-Nitridated Oxides: Abnormal Behaviour of N-4H-SiC/SiO₂ Capacitors at Low Temperature Caused by near Interface States

Abstract:

Comparative studies of gate oxides on a N+ pre-implanted area (Ninterface ~1x1019cm-3) and on a virgin Si face 4H-SiC material (Ninterface ~1x1016cm-3) have been undertaken by means of Capacitance-Voltage (C-V) characteristics, performed at different temperatures and frequencies, and Thermal Dielectric Relaxation Current technique. In the non implanted samples, the stretch out of the C-V curves get larger as the temperature is lowered to 150K, while for lower temperatures the C-V characteristics become steeper and some discontinuities occur. These discontinuities are specific for the non-implanted sample and are associated with charging of the fast near interface states (NIToxfast) via a tunneling from the shallow interface states (Dit). The tunneling from the shallow Dit to NIToxfast supress the a.c. response of Dit, which is recovered only after most of the NIToxfast are charged with electrons.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

346-349

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.346

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Online since:

March 2011

Authors:

Ioana Pintilie, Francesco Moscatelli, Roberta Nipoti, Antonella Poggi, Sandro Solmi, Lars S. Løvlie, Bengt Gunnar Svensson

Keywords:

Border Traps, C-V, Interface State, N Implantation, n-MOS Capacitors, Silicon Carbide (SiC), TDRC, Tunneling

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References

[1] V.V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K. Y. Cheong, S. Dimitrijev.: Appl. Phys. Lett. Vol. 82 (2003) p.568.

DOI: 10.1063/1.1532103

Google Scholar

[2] S. Dhar, S. R. Wang, J. R. Williams, S. T. Pantelides, L. C. Feldman.: MRS Bulletin Vol. 30, (2005) p.288.

Google Scholar

[3] G. V. Soares, I. J. R. Baumvol, L. Hold, F. Kong, J. Han, S. Dimitrijev, S., C. Radtke, CF. C. Stedile: Appl. Phys. Lett. Vol. 91 (2007) p.041906.

DOI: 10.1063/1.2763966

Google Scholar

[4] F. Moscatelli, A. Poggi, S. Solmi, R. Nipoti: IEEE Transactions on Electron Devices Vol. 55 (2008) p.961.

DOI: 10.1109/ted.2008.917107

Google Scholar

[5] ] A. Poggi F. Moscatelli, Y. Hijikata, S. Solmi, R. Nipoti: Microelectr. Eng. Vol. 84 (2007) p.2804.

Google Scholar

[6] J. A. Cooper: Phys. Status Solid A Vol. 162 (1997), p.305.

Google Scholar

[7] A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi, M. Sanmartin, F. Tamarri and R. Nipoti.: Mater. Sci. Forum Vol. 556-557 (2007), p.639.

DOI: 10.4028/www.scientific.net/msf.556-557.639

Google Scholar

[8] H. Ö. Olafsson, E. O. Sveinbjornsson, T. E. Rudenko, V. I. Kilchytska, I. P. Tyagulski, I. N. Osiyuk: Mater. Sci. Forum 389–393, (2002), p.1001.

DOI: 10.4028/www.scientific.net/msf.389-393.1001

Google Scholar

[9] T. E. Rudenko, I. N. Osiyuk, I. P. Tyagulski, H. O. Olafsson, E. O. Sveinbjornsson: Solid-State Electronics Vol. 49 (2005) p.545.

Google Scholar

[10] I. Pintilie, C. M. Teodorescu, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, L. S. Løvlie and B. G. Svensson: J. Appl. Phys. Vol. 108, (2010) 024503.

DOI: 10.1063/1.3457906

Google Scholar

[11] M. Krieger, S. Beljakowa, B. Zippelius, V.V. Afanas'ev, A. J. Bauer, Y. Nanen, T. Kimoto and G. Pensl: Mater. Sci. Forum Vol. 645-648 (2010), p.463.

DOI: 10.4028/www.scientific.net/msf.645-648.463

Google Scholar