Preparation and Characterizations of High Quality InGaAs/GaAs Strained Multi-Quantum Wells Grown by MBE
p.1
p.1
Influence of Growth Parameters on the Surface Morphology of MBE Grown GaAs and AlxGa1-xAs Layers
p.9
p.9
Optical Switching of Double-Barrier Resonant Tunneling AlGaAs/GaAs Diode
p.13
p.13
Sb Delta-Type Doping in Si-MBE Superlattices
p.17
p.17
Molecular Beam Heteroepitaxy on Silicon Substrates
p.21
p.21
MBE Growth, Properties and Applications of Epitaxial Dielectric Fluoride Films on Semiconductors
p.29
p.29
Evaporation and Incorporation of Gallium Atoms and Ions during Si MBE with a Sublimating Source
p.37
p.37
Comparison of Growth Kinetics and Source Material Utilization Efficiency in MBE under Conventional and Ale Conditions
p.41
p.41
PED Mechanism Studied by Moleculardynamic Computer Simulation
p.45
p.45
Sb Delta-Type Doping in Si-MBE Superlattices
Abstract:
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Periodical:
Materials Science Forum (Volume 69)
Pages:
17-20
Citation:
Online since:
January 1991
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