Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low Temperatures

Lucian Dragos Filip; Ioana Pintilie; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.740-742.557

Paper Titles

Characterization of POCl₃-Annealed 4H-Sic Mosfets by Charge Pumping Technique
p.541

Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
p.545

A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
p.549

Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
p.553

Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures
p.557

Boron Diffusion in Silicon Carbide
p.561

Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
p.565

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
p.569

3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
p.573

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors...

Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures

Abstract:

In this work, anomalous discontinuities observed in Capacitance-Voltage (C-V) characteristics on non-nitridated n-4H-SiC/SiO₂ capacitors at low temperature are addressed. The appearance of abrupt capacitance minima, always at the same gate voltages (4V and 8V) and independent on probe frequency, led us to consider a resonant electron tunneling process from neutral donor states present at the SiC/SiO₂ interface into two well defined energy levels in the oxide layer. Results of numerical simulations based on this model describe quantitatively the experimentally observed discontinuities at 4V and 8V and provide strong evidence for the presence resonant tunneling.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

557-560

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.557

Citation:

Cite this paper

Online since:

January 2013

Authors:

Lucian Dragos Filip, Ioana Pintilie, Bengt Gunnar Svensson

Keywords:

4H-SiC, Interface State, MOS, Near Interface States, Resonant Tunnelling

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electr Device L 22, (2001),176 -178.

DOI: 10.1109/55.915604

Google Scholar

[2] D. Peters, R. Schorner, K. H. Holzlein, P. Friedrichs, Appl Phys Lett 71, (1997), 2996-2998.

Google Scholar

[3] F. Moscatelli, A. Poggi, S. Solmi, and R. Nipoti, IEEE Transactions on Electron Devices 55, (2008), 961-967.

DOI: 10.1109/ted.2008.917107

Google Scholar

[4] G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. V. Afanas'ev, A. Stesmans, T. Kimoto, A. Schöner, Phys Status Solidi B 245, (2008), 1378-1389

DOI: 10.1002/pssb.200844011

Google Scholar

[5] I. Pintilie, C. M. Teodorescu, F. Moscatelli, R. Nipoti, A. Poggi, S. Solmi, L. S. Løvlie, and B. G. Svensson, Journal of Applied Physics 108, (2010), 024503.

DOI: 10.1063/1.3457906

Google Scholar

[6] F. Allerstam, H. O. Olafsson, G. Gudjonsson, D. Dochev, E. O. Sveinbjörnsson, T. Rodle, and R. Jos, Journal of Applied Physics 101, (2007),124502.

Google Scholar

[7] T. E. Rudenko, I. N. Osiyuk, I. P. Tyagulski, H. O. Olafsson, and E. O. Sveinbjörnsson, Solid-State Electronics 49, (2005), 545 -.553

DOI: 10.1016/j.sse.2004.12.006

Google Scholar

[8] A. F. Basile and P. M. Mooney, J. Appl. Phys. 111, (2012), 094509

Google Scholar

[9] R. Singh and A. R. Hefner, Solid-State Electronics 48, (2004), 1717-1720.

Google Scholar

[10] V. V. Afanas'ev, M. Bassler, G. Pensl, M. J. Schulz, and E. S. von Kamienski, Journal of Applied Physics 79, (1996), 3108-3114.

DOI: 10.1063/1.361254

Google Scholar

[11] I. Pintilie, F. Moscatelli; R. Nipoti, A.Poggi, S. Solmi, L.S. Lovlie, B.G. Svensson, SILICON CARBIDE AND RELATED MATERIALS 2010 Book Series: Materials Science Forum, 679-680, (2011), 346-349

DOI: 10.4028/www.scientific.net/msf.679-680.346

Google Scholar

[12] B. H. Bransden and C. J. Joachain, Quantum mechanics, Prentice Hall, Harlow, England; New York, 2000.

Google Scholar

[13] L. D. Filip, I. Pintilie, L. C. Nistor and B. G. Svensson, submitted to Thin Solid Films (2012).

Google Scholar

[14] H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, New York; Chichester; Brisbane; Toronto; Singapore, 1982.

Google Scholar