Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC

Toby Hopf; Konstantin Vassilevski; Enrique Escobedo-Cousin; Nick G. Wright; Anthony G. O'Neill; Alton B. Horsfall; Jonathan P. Goss; Anders Barlow; George Wells; Michael Hunt

doi:10.4028/www.scientific.net/MSF.778-780.1154

Paper Titles

Controlling the Carrier Concentration of Epitaxial Graphene by Ultraviolet Illumination
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Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts
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Carrier Mobility as a Function of Temperature in as-Grown and H-Intercalated Epitaxial Graphenes on 4H-SiC
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Stability and Reactivity of [11-20] Step in Initial Stage of Epitaxial Graphene Growth on SiC(0001)
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Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC
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Formation of Graphene onto Atomically Flat 6H-SiC
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Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms
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Backside Monitoring of Graphene on Silicon Carbide by Raman Spectroscopy
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Ion-Beam Irradiation Effect in the Growth Process of Graphene on Silicon Carbide-on-Insulator Substrates
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Optimizing the Vacuum Growth of Epitaxial Graphene...

Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC

Abstract:

Multilayer epitaxial graphene has been grown on the Si-face of 6H-SiC on-axis commercial substrates under high vacuum conditions and at growth temperatures up to 1900 °C, utilizing the standard sublimation growth technique and a modified SiC rapid thermal annealing system which allows for excellent control of heating and cooling ramp rates. The peak growth temperature and total growth time during the graphene growth step, along with the temperature of the initial substrate etch step, were all systematically varied in order to ascertain their effect on the formation of epitaxial graphene films on the SiC surface. Modifying the substrate etch temperature was found to have a significant impact on the morphology of the SiC substrate, with a uniform step structure only developing across the surface within a narrow temperature band. Furthermore, changing the values of the peak temperature or the growth time during the growth step were both shown to have a large effect on the resultant materials properties of the graphene films.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

1154-1157

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.1154

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Online since:

February 2014

Authors:

Toby Hopf*, Konstantin Vassilevski, Enrique Escobedo-Cousin, Nick G. Wright, Anthony G. O'Neill, Alton B. Horsfall, Jonathan P. Goss, Anders Barlow, George Wells, Michael Hunt

Keywords:

Epitaxial Graphene, Silicon Carbide (SiC), Sublimation Growth

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* - Corresponding Author

References

[1] K.S. Novoselov et al., Electric field effect in atomically thin carbon films, Science 22 (2004) 666.

Google Scholar

[2] A.K. Geim, Graphene: status and prospects, Science 324 (2009) 1530.

Google Scholar

[3] C. Berger et al., Electronic confinement and coherence in patterned epitaxial graphene, Science 312 (2006) 1191.

Google Scholar

[4] K.V. Emtsev et al., Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide, Nat. Mater. 8 (2009) 203.

Google Scholar

[5] N. Srivastava et al., Graphene formed on SiC under various environments: comparison of Si-face and C-face, J. Phys. D: Appl. Phys. 45 (2012) 154001.

DOI: 10.1088/0022-3727/45/15/154001

Google Scholar

[6] W.A. de Heer et al., Epitaxial graphene, Solid State Comm. 143 (2007) 92.

Google Scholar

[7] J.B. Hannon, R.M. Tromp, Pit formation during graphene synthesis on SiC(0001): In situ electron microscopy, Phys. Rev. B 77 (2008) 241404.

DOI: 10.1103/physrevb.77.241404

Google Scholar

[8] C. Riedl et al., Structural properties of the graphene-SiC(0001) interface as a key for the preparation of homogeneous large-terrace graphene surfaces, Phys. Rev. B 76 (2007) 245406.

DOI: 10.1103/physrevb.76.245406

Google Scholar

[9] D.S. Lee et al., Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2, Nano Lett. 8 (2008) 4320.

DOI: 10.1021/nl802156w

Google Scholar

[10] S. Tanaka, K. Morita, H. Hibino, Anisotropic layer-by-layer growth of graphene on vicinal SiC(0001) surfaces, Phys. Rev. B 81 (2010) 041406.

DOI: 10.1103/physrevb.81.041406

Google Scholar