Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors

L.F. Makarenko; F.P. Korshunov; S.B. Lastovski; Stanislav B. Lastovskii; N.M. Kazuchits; M.S. Rusetsky; Eckhart Fretwurst; G. Lindström; Michael Moll; Ioana Pintilie; N.I. Zamiatin

doi:10.4028/www.scientific.net/SSP.108-109.217

Paper Titles

A Theoretical Study of Dislocation Formation at Surfaces in Covalent Materials: Effect of Step Geometry and Reactivity
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Peculiarities of the Initial Stage of Oxygen Precipitation in Irradiated Silicon
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The Effect of Thermal Treatments on the Annealing Behaviour of Oxygen-Vacancy Complexes in Irradiated Carbon-Doped Silicon
p.205

Evolution of Hydrogen Related Defects in Plasma Hydrogenated Crystalline Silicon under Thermal and Laser Annealing
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Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors
p.217

Metastable VO₂ Complexes in Silicon: Experimental and Theoretical Modeling Studies
p.223

Quantum-Chemical Simulation of Silicon Grain Boundaries Contaminated by Oxygen and Carbon
p.235

Study of Au Diffusion in Nitrogen-Doped FZ Si
p.241

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Effect of Hydrogenation on Defect Reactions in...

Effect of Hydrogenation on Defect Reactions in Silicon Particle Detectors

Abstract:

The influence of preliminary treatment in hydrogen plasma on elimination of radiation defects and formation of thermal donors has been studied in detector structures made of standard and oxygenated float zone silicon has been studied. A new type of thermal donors has been found in as-treated diodes. These thermal donors are unstable and can be eliminated by heat-treatment at 200-250°C. After irradiation with 3.5 MeV electrons the detectors had been annealed at temperatures of 50-350 °C. It has been found that preliminary hydrogenation at 300 °C leads to disappearance of main vacancy-type radiation defects at lower annealing temperatures. The annealing of hydrogenated and irradiated crystals is accompanied by hydrogen redistribution and formation of hydrogen-related donors. Preliminary irradiation influences on both these processes.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

217-222

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.217

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Online since:

December 2005

Authors:

L.F. Makarenko, F.P. Korshunov, S.B. Lastovski, Stanislav B. Lastovskii, N.M. Kazuchits, M.S. Rusetsky, Eckhart Fretwurst, G. Lindström, Michael Moll, Ioana Pintilie, N.I. Zamiatin

Keywords:

Electron Irradiation, Hydrogen, Radiation Defect, Silicon Detector

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