Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering

Mariana A. Fraga

doi:10.4028/www.scientific.net/MSF.679-680.217

Paper Titles

Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC
p.201

Optically Detected Temperature Dependences of Carrier Lifetime and Diffusion Coefficient in 4H- and 3C-SiC
p.205

The Strong Field Transport in 4H- and 6H-SiC at Low Temperature
p.209

Complete Determination of the Local Stress Field in Epitaxial Thin Films Using Single Microstructure
p.213

Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering
p.217

Raman Study of Bulk Mobility in 3C-SiC Heteroepitaxy
p.221

Defects in SiC: Theory
p.225

Enhanced Annealing of MeV Ion Implantation Damage in N-Type 4H Silicon Carbide by Thermal Oxidation
p.233

Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100°C to 1500°C
p.237

HomeMaterials Science ForumMaterials Science Forum Vols. 679-680Comparison between the Piezoresistive Properties...

Comparison between the Piezoresistive Properties of a-SiC Films Obtained by PECVD and Magnetron Sputtering

Abstract:

This work compares the piezoresistive properties of SiC thin films produced by two techniques enhanced by plasma, PECVD (plasma enhanced chemical vapor deposition) and RF magnetron sputtering. In order to study these properties, strain gauges based on SiC films produced were fabricated using photolithography techniques in conjunction with lift-off processes. The beam-bending method was used to characterize the SiC strain gauges fabricated.

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Silicon Carbide and Related Materials 2010

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

217-220

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.217

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Online since:

March 2011

Authors:

Mariana A. Fraga

Keywords:

Gauge Factor, PECVD, Piezoresistive Property, RF Magnetron Sputtering, Silicon Carbide (SiC)

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