Deep Levels in Bulk-ZnSe Grown by Bridgman Method
p.367
p.367
Characterization of Defects in 6H-Type Epitaxially Grown Silicon Carbide Wafer by Cathodoluminescence Microscopy
p.377
p.377
The Relaxation of the ZnO Single Crystals (000-1) Surface
p.381
p.381
TEM Observation of Barium Titanate Thin Films Consisting of Nano-Sized Single Crystals Prepared by Sol-Gel Processing
p.387
p.387
The Investigation of Charge Transport Properties of SOI Semiconductor Devices Using a Heavy Ion Microbeam
p.395
p.395
A System for Ultra-Fast Transient Ion and Pulsed Laser Current Microscopies as a Function of Temperature
p.401
p.401
Visualization of Electron Beam Charge Storage and Thermal Release in Thin Insulating Layers
p.407
p.407
Development of an Ultra-Precision Positioner and its Applications
p.413
p.413
Photoabsorption Spectroscopy on Nanometer Scale by Scanning Tunneling Microscopy
p.419
p.419
The Investigation of Charge Transport Properties of SOI Semiconductor Devices Using a Heavy Ion Microbeam
Abstract:
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Info:
Periodical:
Solid State Phenomena (Volumes 78-79)
Pages:
395-400
Citation:
Online since:
April 2001
Authors:
Price:
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