To apply an Al2O3/SiNx front side boron emitter passivation in combination with a fired contact formation on n-type silicon solar cells, both the electrical and the optical firing stability of this stack is indispensable. Thus, in this work we studied the stability of Al2O3/SiNx layer stacks for the passivation of boron emitters as a function of Al2O3 deposition parameters, as well as the thickness of the Al2O3 layers and the firing peak temperature, for atomic layer deposited Al2O3. The observed stability behavior was correlated with microscopic and structural observations, such as SEM images and FTIR measurements. Based on the results, p+nn+ solar cells were fabricated on 1 Ωcm FZ silicon with printed, fired and plated front contacts and a non-passivated, fully metalized phosphorous-doped back surface field. Confirmed conversion efficiencies up to 20.8% on small-area cells (4 cm2) and up to 19.6% on large-area cells (140.5 cm2) have been achieved. This demonstrates the potential of Al2O3/SiNx passivated front side boron emitters for n-type silicon solar cells with a high-temperature contact formation.