Abstract:
: In this paper, ZnOxMgO1-x composites were deposited on glass and silicon substrate using E-Beam Deposition Technique. Doping of MgO is in atomic percentage for various compositions from 0% to 90%. XRD results show that MgO has been doped successfully. The investigation of Band gap has been done and the result displays as the MgO content is increased, the band gap is tuned from 3.16 eV to 3.55 eV and transmission band edge is blue shifted about 36 meV to the higher energy direction, this is closely related to formation of mesoporous structure. The Band Gap has been calculated using UV-Vis Spectroscopy. Investigation confirms that defects in surface have been increased with the increase in MgO Content.
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