Modeling of Armchair Graphene Nanoribbon Tunnel Field Effect Transistors for Low Power Applications

E. Suhendi; L. Hasanah; F. A. Noor; N. Kurniasih; Khairurrijal

doi:10.5573/JSTS.2019.19.4.336

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대한전자공학회
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 학술저널
Journal of Semiconductor Technology and Science Vol.19 No.4
2019.8 336 - 346 (11page)
DOI : 10.5573/JSTS.2019.19.4.336

저자정보

E. Suhendi (Universitas Pendidikan Indonesia)
L. Hasanah (Universitas Pendidikan Indonesia)
F. A. Noor (Institut Teknologi Bandung)
N. Kurniasih (Institut Teknologi Bandung)
Khairurrijal (Institut Teknologi Bandung)

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Characteristics of an armchair graphene nanoribbon tunnel field effect transistor (AGNRTFET) were modeled quantum mechanically. The transport equation in the AGNR-TFET was solved by using the Dirac-like equation. The potential profile in the AGNR-TFET was determined by solving the Dirac-like equation and the self-consistent Poisson equation. The transfer matrix method (TMM), as a numerical approach, and the Landauer formula were used to calculate the electron transmittance and the tunneling current respectively. The threshold voltage of the device was around 0.01 V. The effect of the AGNR-TFET’s geometry, i.e. width and length of AGNR and oxide thickness, on the tunneling current and the subthreshold swing was also analyzed. It was found that the tunneling current increased with an increase of the width of the AGNR and the oxide thickness while increasing the length of the AGNR made the tunneling current decrease. According to the simulation results, the subthreshold swing of the device can achieve 5 mV/dec. Moreover, the AGNRTFET geometry affects the subthreshold swing of the device.

#Armchair graphene nanoribbon #tunnelfield-effect transistor #tunneling current #transfer matrix method #dirac-like equation