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Abstract
Ⅰ. INTRODUCTION
Ⅱ. GROWTH AND DEVICE FABRICATION
Ⅲ. RESULTS AND DISCUSSION
Ⅳ. CONCLUSION
REFERENCES
H. Zhang, E. J. Miller, and E. T. Yu, “Analysis of leakage current mechanisms in Schottky contacts to GaN and Al0.25Ga0.75N/GaN grown by molecularbeam epitaxy,” J. Appl. Phys., Vol. 99, No. 2, pp. 023703-1?023703-6, Jan., 2006.
S. L. Selvaraj, et al, “1.4-kV Breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate,” IEEE Electron Device Lett., Vol. 33, No. 10, pp. 1375?1377, Oct., 2012.
J.-J. Zhu, et al, “Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metaloxide- semiconductor high-electron-mobility transistors,” Appl. Phys. Lett., Vol. 104, No. 15, pp. 153510-1?153510-4, Apr., 2014.
P. Kordo?, et al, “High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure fieldeffect transistors,” Appl. Phys. Lett., Vol. 87, No. 14, p. 143501-1?143501-3, Sep., 2005.
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