Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Numerical Modeling of Deposition Uniformity in ICP-CVD System

수치모델을 이용한 ICP-CVD 장치의 증착 균일도 해석

  • Joo, Jung-Hoon (Department of Materials Science and Engineering and Plasma Materials Research Center, Kunsan National University)
  • 주정훈 (군산대학교 공과대학 신소재공학과, 플라즈마 소재 응용 센터)
  • Published : 2008.12.31
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Abstract

Numerical analysis is done to investigate which would be the most influencing process parameter in determining the uniformity of deposition thickness in TiN ICP-CVD(inductively coupled plasma chemical vapor deposition). Two configurations of ICP antenna are modeled; side and top planar. Side and top gas inlets are considered with each ICP antenna geometries. Precursor for TiN deposition was TDMAT(Tetrakis Diethyl Methyl Amido Titanium). Two step volume dissociation of TDMAT is used and absorption, desorption and deposition surface reactions are included. Most influencing factors are H and N concentration dissociated by electron impact collisions in plasma volume which depends on the relative positions of gas inlet and ICP antenna generated hot plasma region. Low surface recombination of N shows hollow type concentration, but H gives a bell type distribution. Film thickness at substrate edges is sensitive to gas flow rate and at high pressures getting more dependent on flow characteristics.

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