The Transactions of the Korean Institute of Power Electronics (전력전자학회논문지)

The Korean Institute of Power Electronics (전력전자학회)
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Design of Gate Driver Power Supply for 3-Phase Inverter Using SiC MOSFET

SiC MOSFET를 사용한 3상 인버터용 게이트 드라이버 전원 설계

  • Lee, Sangyong (Dept. of Control & Instrumentation Engineering, Gyeongsang National University) ;
  • Chung, Se-Kyo (Dept. of Control & Instrumentation Engineering, Gyeongsang National University)
  • Received : 2021.09.10
  • Accepted : 2021.10.20
  • Published : 2021.12.31
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Abstract

The design of a gate driver power supply for a three-phase inverter using a silicon carbide (SiC) MOSFET. The requirements for the power supply circuit of the gate driver for the SiC MOSFET are investigated, and a flyback converter using multiple transformers is used to make the four isolated power supplies. The proposed method has the advantage of easily constructing the power supply circuit in a limited space as compared with a multi-output flyback converter using a single core. The power supply circuit for the three-phase SiC MOSFET inverter for driving an AC motor is designed and implemented. The operation and validity of the implemented circuit are verified through simulations and experiments.

Keywords

Acknowledgement

본 연구는 과학기술정보통신부의 재원으로 한국연구재단의 지원을 받아 수행되었음. (NRF-2019R1F1A1062892)

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