Abstract
The first lasing operation was realized for InGaAlP visible lasers grown by metal organic chemical vapor deposition (MOCVD) with TBP which is a liquid organometallic source, a safer alternative to phosphine. A threshold current density was 1.3 kA/cm2 with pulse operation was obtained for broad area lasers at 77 K. The threshold current density was observed to be extremely sensitive to the temperature even at low temperature region, which is considered to be caused by a higher non-radiative recombination rate in the cladding layers.