Abstract
Synchrotron radiation has been used for X-ray lithography. At an electron energy of 1. 1 GeV, o.4 µm gold layer on 3 µm silicon membrane was sufficient for obtaining good contrast in PMMA for direct SOR total beam. By using the mask of the gold grating pattern with 692 nm period made by holographic method, the grating pattern with a large height-to-width ratio of very narrow line (2.2 µm: 0.2 µm) is obtained in PMMA. This result clearly demonstrates the high collimation of X-ray beam from the synchrotron. Effects of diffraction are observed in replicated patterns when a mask and a wafer are separated and are well explained by the theory of Fresnel diffraction as a function of the slit width, the wavelength and the distance between a mask and a wafer.