Suppression of Anomalous Drain Current in Short Channel MOSFET

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Copyright (c) 1979 The Japan Society of Applied Physics
, , Citation Masami Konaka et al 1979 Jpn. J. Appl. Phys. 18 27 DOI 10.7567/JJAPS.18S1.27

1347-4065/18/S1/27

Abstract

The current voltage characteristics of short channel nMOSFET in the subthreshold region is investigated by two-dimensional numerical analysis. Deep ion implantation of acceptor impurities beneath the channel is found to improve the subthreshold characteristics. Structure optimization for the deeply ion-implanted short channel MOSFET is carried out to obtain low subthreshold current with steep semilogarithmic slope, which are almost comparable with the long channel MOSFET.

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10.7567/JJAPS.18S1.27