Abstract
Monolithic integration of a double heterostructure laser diode and field effect transistors, all of GaAs/GaAlAs, involving only planar type fabrication processes is demonstrated. The ICs are fabricated using liquid phase epitaxy, and lift-off. The functions of normally-on type Schottky gate FETs and a Fabry-Perot type infra-red laser diode are successfully matched, to realize high speed modulation with high extinction ratio and no pattern effect. Moreover, activation of the laser by positively pulsed electric signals on gates is demonstrated utilizing an auto-bias of the ICs. The rise time of the pulsed response is about 0.4 ns, suggestive of GHz operation.