The Use of Selective Annealing for Growing Very Large Grains in Silicon on Insulator Films

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Copyright (c) 1983 The Japan Society of Applied Physics
, , Citation J. P. Colinge et al 1983 Jpn. J. Appl. Phys. 22 205 DOI 10.7567/JJAPS.22S1.205

1347-4065/22/S1/205

Abstract

The selective annealing technique (laser annealing under patterned antireflecting coating) has been successfully applied to the growth of very large (20 µm × 3000 µm) silicon single crystals. The grain boundary location is controlled by a conventional lithography step, and the grains obtained have a nearly perfect rectangular shape.

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10.7567/JJAPS.22S1.205