Dependence of Switching and Memory Times of Optical Switching Element Utilizing Ferroelectric Liquid Crystals on Thickness of Cell and Material

, , and

Copyright (c) 1985 The Japan Society of Applied Physics
, , Citation Katsumi Yoshino et al 1985 Jpn. J. Appl. Phys. 24 59 DOI 10.7567/JJAPS.24S3.59

1347-4065/24/S3/59

Abstract

Switching times rise time, decay time and memory time, of various electro-optic effects in ferroelectric liquid crystals are found to be strongly dependent on the molecular structure, cell thickness and temperatures. Especially in TSM (transient scattering mode) operation, the rise time becomes shorter in liquid crystals with larger spontaneous polarization, at high temperatures and in thinner cell. The decay time is also shorter at higher temperatures, in thinner cells and also in materials with higher relaxation frequency of dielectric constant.

Export citation and abstract BibTeX RIS

10.7567/JJAPS.24S3.59