Abstract
Kossel diffraction patterns have been utilized to measure the lattice strains caused by insulating films deposited on silicon crystals. The enhanced X-ray diffraction intensity has been found at the locally strained regions of crystals. The local lattice strain causes also the shifting and the kinkings of the Kossel diffraction lines. The deviations from the normal positions of the patterns indicate the magnitude of the lattice strains. The distributions across the film edges appear along the Kossel patterns when the diffracted region is made to cross the film edges perpendicularly. The depth distributions can also be measured by using appropriate X-ray sources to vary the extinction distance. This method has been applied to measure the lattice strain in silicon crystals coated with silicon nitride films. The strain compensation brought about by underlying silicon oxide films has been observed.